Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed 0.53 Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47 As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism implemented in SILVACO Atlas TCAD quantum package closely mimic actual device physics, together with judicious choice of material parameters, models, and suitable discretization associated epitaxial layer structure. The validity was proved by comparing simulated data experimental measurements resulting from fabricated micrometer-sized RTD devices featuring two different epitaxially grown stacks. Our results show that software can correctly compute peak current density ${J} _{p}$ , voltage notation="LaTeX">${V} valley-to-peak difference notation="LaTeX">$\Delta {V}$ = _{v} - {V} negative differential resistance (NDR) region heterostructure static density–voltage ( notation="LaTeX">${J}$ – notation="LaTeX">${V}$ ) characteristic at room temperature (RT), all which are key parameters design these for use oscillator circuits. We believe work will now help optimizing structure maximize its radio-frequency (RF) power performance, accelerating developments rapidly evolving technology emerging applications, including next-generation ultra-broadband short-range wireless communication links high-resolution imaging systems.